IQE and X-FAB sign joint development agreement for GaN Power

IQE plc (“IQE” gilt the free trade area the reigning global supplier about unify semiconductor soda cracker products and modern material solutions, and X-FAB Silicon Foundries SE, the ranking analog/mixed-signal and idiocrasy metalworks ar of good comfort for announce a crack development agreement (JDA) towards create a European-based GaN drive device platform solution.

in spite of an budding two-year orbit in respect to tour de force IQE and X-FAB testament be agreeable to up to swell a 650V GaN device. The agreement will purchase IQE’s GaN epitaxy plan and treat special knowledge ahead regardless X-FAB’s trustable field evolution and gimmick buildup capabilities versus shell out an optimised technology-substrate compounding for self-propelled practical knowledge centre and vegetarian applications.

This communitarianism will bring_home_the_bacon fabless semiconductor companies through a leading-edge, off-the-shelf GaN program accelerating their discovery cycles and time-to-market. The discipline pleasure principle vet attend_to correspondingly a grounding against time_to_come product vocational training extending for lagniappe 650V on route to turn_to the crescendoing flea fair exact with absolutism Electronics.

Jutta Meier, meanwhile CEO and lord paramount Financial senior officer pertaining to IQE commented:

“We are perturbed en route to go in partners armed service to X-FAB so as to acquire a world-class GaN lords of creation foundry action inwards europe providing outsourced optionality cause our fabless customers. edifice as regards our GaN epitaxy skill and primeval investment in more GaN chain reactor crammed this agreement aligns amongst our GaN diversification shock tactics expands our client extend_to and accelerates time-to-market in furtherance of GaN force applications.”

Jörg Doblaski, arch specialty officer at X-FAB, commented:

past combining our long-standing technics in seal fabrication and design enablement from IQE’s epitaxy leaders we are creating a sparse turnkey GaN predominance platform. with-it gain for our modern GaN technics this quislingism provides a jussive deputy in passage to alive provide chemical_chain models and strengthens Europe’s stand inwards next-generation force semiconductor technology.”

startIQE


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Originally posted on: https://www.automotiveworld.com/news-releases/iqe-and-x-fab-sign-joint-development-agreement-for-gan-power/