Toshiba Electronics Europe GmbH has launched the XPJ1R504PB, an AEC-Q101 compliant 40V, 120A N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) in the S-TOGL™ package for 12V automotive systems. Target applications include inverters, semiconductor relays, load switches and motor drives, where the demands of automotive electrification require low power loss and high heat dissipation in compact form factors.

The S-TOGL package uses gull-wing leads to relieve mounting stress, improving the mechanical reliability of solder joints in the wide temperature conditions typical of automotive applications. A post-less structure integrates the chip’s source-electrode connection and outer leads, reducing parasitic resistance and achieving an on-resistance (RDS(ON)) of 1.54mΩ (max.) at a gate-source voltage (VGS) of 10V.

A thick copper frame lowers the transient thermal impedance between channel and case (Zth(ch-c)) to 0.76°C/W, reducing conduction loss and suppressing heat generation. A multi-pin source lead structure enhances current distribution and enables the device’s 120A current rating.

The XPJ1R504PB joins the XPJR6604PB and XPJ1R004PB in Toshiba’s S-TOGL family, covering a broader range of voltage ratings for automotive system designers. As inverter and motor drive adoption grows with vehicle electrification, the combination of compact packaging and strong thermal performance becomes increasingly critical for system design.

Source: Toshiba